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| PHOTO IC Light modulation photo IC S4282-51, S6809, S6846, S6986, S7136/-10, S10053 Fewer detection errors even under disturbance background light These light modulation photo ICs were developed for optical synchronous detection under disturbance background light. A photodiode, preamplifier, comparator, oscillator, LED driver and signal processing circuit, etc. are all integrated on a monolithic photo IC chip. Optical synchronous type photoreflectors and photointerrupters, which less susceptible to disturbance background light, can be easily configured by just connecting an external LED to this photo IC. Our unique circuit design achieves an allowable background light level of 10000 lx Typ. (S4282-51, S6986, S10053) and a minimum detection level of 0.2 W/mm2 Typ. (S6809, S6846, S7136/-10). Features S4282-51, S6986, S10053: 10000 lx Typ. S6809, S6846, S7136/-10 : 3000 lx Typ. l Minimum detection level S4282-51, S6986, S10053: 0.7 W/mm2 Typ. S6809, S6846, S7136/-10 : 0.2 W/mm2 Typ. l Digital output (Output appears "L" by light input.) l Small hysteresis (S6809) l Small SMD package (S10053) Applications l Large allowable background light level l Paper detection in office machine (copiers, fax machines, etc.) l Optical switch s Absolute maximum ratings (Ta=25 C) Parameter Supply voltage Output voltage Output current Cathode output voltage Cathode output current Power dissipation *1 Operating temperature Storage temperature Symbol Vcc Vo Io Vcath Icath P Topr Tstg S4282-51, S6986, S10053 S6809, S6846, S7136/-10 -0.5 to +16 -0.5 to +16 50 -0.5 to +16 70 250 -25 to +60 -40 to +100 Unit V V mA V mA mW C C *1: Derate power dissipation at a rate of 3.3 mW/C above Ta=25 C s Spectral response (typical example) S4282-51, S6986, S10053 100 (Ta=25 C) 100 S6809, S6846, S7136/-10 (Ta=25 C) RELATIVE SENSITIVITY (%) RELATIVE SENSITIVITY (%) 80 80 60 60 40 40 20 20 0 400 600 800 1000 1200 0 400 600 800 1000 1200 WAVELENGTH (nm) KPICB0001EB WAVELENGTH (nm) KPICB0002EA Light modulation photo IC S4282-51, S6809, S6846, S6986, S7136/-10, S10053 S4282-51, S6986, S10053 Output: built-in pull-up resistor *2 Cathode: constant current drive Min. Typ. Max. 4.5 16 4.9 4 0.2 11 0.4 4.9 15 65 4 35 130 8 0.7 60 220 13.7 2 65 4 0.45 0.65 (S6809) 0.5 130 8 0.2 0.65 0.8 (S6809) 1.25 220 13.7 1.0 0.95 0.95 (S6809) 0.8 S6809, S6846, S7136 /-10 Output: open collector *3 Cathode: open collector drive Min. Typ. Max. 4.5 16 4 0.2 11 0.4 s Electrical and optical characteristics (Ta=25 C, Vcc=5 V) Parameter Supply voltage Current consumption Low level ou tpu t voltage High level output voltage Low level ou tpu t voltage Low level ou tpu t curre nt Pulse cycle Pulse width HL Threshold light level Output Cathode Hysteresis Frequency response Allowable background light level Symbol Vcc Icc VOL VOH Vo, LED terminals open IOL=16 mA 4.7 k b etwe e n Vcc and Vo Condition Unit V mA V V V V mA s s W/mm2 Vcath Icath=40 mA Icath Vcath=1.2 V Tp Tw EHL =940 nm No background light - f Signal light: 5 W / m m 2 p=940 nm 0.45 0.5 0.65 1.25 0.95 - kHz Ex Background light: "A" light source Output 5000 10000 - 2000 3000 - lx *2: Cathode *3: Vcc Cathode Output Vcc CATHODE (LED) 10 k Vcc CATHODE (LED) Vcc Vout Vout GND GND GND KPICC0009EA GND KPICC0010EA s Block diagram and internal functions CONSTANT VOLTAGE BUFFER PD PREAMP COMPARATOR Vcc (a) Oscillator and timing signal generator The oscillator produces a reference oscillation output by charging and discharging the built-in capacitor with constant current. The oscillation output is fed to the timing signal generator, which then creates LED drive pulses and various timing pulses for digital signal processing. (b) LED driver circuit This circuit drives an external LED using the LED drive pulses created by the timing signal generator. The duty cycle is 1/16. (c) Photodiode and preamplifier circuit Vref The photodiode is formed on the same monolithic chip. A photocurrent generated in the photodiode is converted to a voltage by a preamplifier circuit. The preamplifier circuit uses an AC amplifier to expand the dynamic range versus DC or low-frequency background light, without impairing signal detection sensitivity. Vout OUTPUT CIRCUIT SIGNAL PROCESSING CIRCUIT (d) Capacitive coupling, buffer amplifier and reference voltage generator Capacitive coupling removes low-frequency noise and also cancels the DC offset in the preamplifier. The buffer amplifier boosts the signal up to the comparator level, and the reference voltage generator produces a comparator level voltage. OSCILLATOR TIMING GENERATOR LED DRIVER CATHODE (LED) (e) Comparator circuit The comparator circuit has a hysteresis function to prevent chattering caused by small fluctuations in the input light. GND (f) Signal processing circuit The signal processing circuit consists of a gate circuit and digital integrator circuit. The gate circuit discriminates input pulses during synchronous detection, to prevent operational errors caused by asynchronous background light. Background light which is synchronized with the signal detection timing cannot be eliminated by the gate circuit, but is canceled out by the digital integrator circuit at the latter stage. TRUTH TABLE INPUT LIGHT ON LIGHT OFF OUTPUT LEVEL LOW HIGH KPICC0002EA (g) Output circuit This circuit serves as an output buffer for the signal processing circuit and outputs the signal to an external circuit. Light modulation photo IC S4282-51, S6809, S6846, S6986, S7136/-10, S10053 s Dimensional outlines (unit: mm) S6809, S6846, S6986 5.2 0.3 (INCLUDING BURR) 2.05 0.2 5.0 CENTER OF 2.5 0.2 ACTIVE AREA 2.0 1.0 5.2 0.3 (INCLUDING BURR) 10 0.55 0.45 16.5 1.0 (0.8) 1.27 1.27 1.27 (SPECIFIED AT THE LEAD ROOT) PHOTOSENSITIVE SURFACE 10 0.7 0.15 0.25 -0.1 +0.15 Vout GND CATHODE (LED) Vcc Tolerance unless otherwise noted: 0.1, 2 Shaded area indicates burr. Values in parentheses are not guaranteed, but for reference. KPICA0008EC 5 S4282-51, S7136 4.6 0.2 (INCLUDING BURR) 4.5 * 0.7 0.5 CENTER OF ACTIVE AREA 5.6 0.2 (INCLUDING BURR) KPICA0009EB 3.1 0.4 5.4 * 2.54 10 1.0 2.0 3 5 CATHODE (LED) Vcc Vout GND (SHORT LEAD) Tolerance unless otherwise noted: 0.1, 2 Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X0.2 Y0.2 5.5 1.0 (DEPTH 0.15 MAX.) PHOTOSENSITIVE SURFACE 0.7 0.15 5.75 0.2 5 0.25 3 4.5 * 7.5 5 2.0 (DEPTH 0.15 MAX.) 4.5 0.4 (1.0) 2.0 (DEPTH 0.15 MAX.) 5.0 Light modulation photo IC S4282-51, S6809, S6846, S6986, S7136/-10, S10053 S7136-10 INDEX MARK 0.6 0.5 4.6 0.2 (INCLUDING BURR) CENTER OF ACTIVE AREA 5.6 0.2 (INCLUDING BURR) 5.4 * 2.54 10 0.7 0.15 1.5 0.4 4.5 * 7.5 0.3 0.7 0.3 5 0.25 1.5 0.4 1.0 2.0 0.7 0.3 PHOTOSENSITIVE SURFACE CATHODE (LED) Vcc Vout GND 0.1 0.1 3 Tolerance unless otherwise noted: 0.1, 2 Shaded area indicates burr. Chip position accuracy with respect to package dimensions marked * X0.2 KPICA0034EB Y0.2 S10053 4.1 Max. CENTER OF (INCLUDING BURR) ACTIVE AREA 0.4 0.3 4.2 0.2 (INCLUDING BURR) 3.4 MIRROR AREA RANGE 0.8 0.8 0.8 0.8 1.0 0.4 1.0 0.4 0.05 0.5 5.0 0.3 * 0.45 0.3 2.8 2.4 MIRROR AREA RANGE 0.15 0.75 0.45 0.3 PHOTOSENSITIVE SURFACE 1.3 2.9 3.0 * Vout (GND) (GND) (GND) GND CATHODE (LED) (GND) (GND) (SHORT LEAD) (GND) Vcc (GND) terminals should be connected to GND terminal on board. Tolerance unless otherwise noted: 0.1 Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X0.2 Y0.2 KPICA0076EB 0.1 0.1 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4.0 * 3.8 3.9 3 5.5 * Cat. No. KPIC1002E06 Jul. 2007 DN |
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